60612 tkim/d1510pa tkim tc-00002500 no. a1874-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 SFT1350 p-channel power mosfet ? 40v, ? 19a, 59m , single tp/tp-fa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 3 2, 4 ordering number : ena1874a features ? on-resistance r ds (on)1=45m (typ.) ? input capacitance ciss=590pf(typ.) ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --40 v gate-to-source voltage v gss 20 v drain current (dc) i d --19 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --76 a allowable power dissipation p d 1.0 w tc=25 c23w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-004 7003-004 product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) t1350 lot no. 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain tp-fa tl SFT1350-h SFT1350-tl-h
SFT1350 no. a1874-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --40 v zero-gate voltage drain current i dss v ds =--40v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.7 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--9.5a 8.7 s static drain-to-source on-state resistance r ds (on)1 i d =--9.5a, v gs =--10v 45 59 m r ds (on)2 i d =--5a, v gs =--4.5v 73 105 m input capacitance ciss v ds =--20v, f=1mhz 590 pf output capacitance coss 85 pf reverse transfer capacitance crss 61 pf turn-on delay time t d (on) see speci ed test circuit. 8ns rise time t r 40 ns turn-off delay time t d (off) 52 ns fall time t f 44 ns total gate charge qg v ds =--20v, v gs =--10v, i d =--19a 12 nc gate-to-source charge qgs 3.6 nc gate-to-drain ?miller? charge qgd 2.0 nc diode forward voltage v sd i s =--19a, v gs =0v --1.03 --1.2 v switching time test circuit ordering information device package shipping memo SFT1350-h tp 500pcs./bag pb free and halogen free SFT1350-tl-h tp-fa 700pcs./reel pw=10 s d.c. 1% p. g 50 g s d i d = --9.5a r l =2.1 v dd = --20v v out v in 0v --10v v in SFT1350
SFT1350 no. a1874-3/9 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it16056 0 0 --12 --10 --14 --20 --18 --16 --0.8 --0.6 --2.0 --0.4 --0.2 --1.8 --1.2 --1.0 --1.6 --1.4 -- 8 -- 6 -- 4 -- 2 --4.5v --16.0v v gs = --3.5v --4.0v --10.0v --8.0v --6.0v tc=25 c it16108 0 --20 --15 --25 --30 --10 -- 5 0--7 -- 6 -- 5 -- 1 -- 3 -- 2 -- 4 tc= --25 c tc=75 c --25 c 25 c 25 c 75 c v ds = --10v | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds it16068 --60 --40 --20 0 20 40 60 80 100 140 120 160 160 140 120 100 80 60 40 20 0 v gs = --10.0v, i d = --9. 5a v gs = - -4.5v, i d = --5.0a it16071 it16072 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --0.001 --0.01 --10 --100 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 --1.0 7 5 3 2 --0.1 25 c --25 c tc=75 c v gs =0v 0 300 250 200 150 100 50 0 --2 --16 --6 --14 --10 --4 --8 --12 tc=25 c i d = --5a it16073 10 1.0 100 1000 3 2 2 5 7 3 2 5 7 7 3 5 --0.1 --1.0 --10 --100 23 57 23 57 23 57 v dd = --20v v gs = --10v t d (off) t r t d (on) 0 100 10 1000 7 5 3 3 2 7 5 2 --20 --15 --40 --10 --5 --35 --25 --30 it16074 f=1mhz ciss coss crss t f --9.5a i s -- v sd it16109 --0.1 23 5 --1.0 --100 23 57 --10 23 57 7 1.0 0.1 10 100 5 7 2 3 2 2 3 5 3 7 7 5 v ds = --10v tc= --25 c 75 c 25 c
SFT1350 no. a1874-4/9 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it16065 --0.1 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --0.1 10 s 100 s 10ms 1ms dc operation --1.0 --10 --100 2 3 57 2 3 57 2 3 57 --10 2 3 5 7 --100 --1000 operation in this area is limited by r ds (on). i d = --19a it116064 0 -- 2 -- 4 -- 6 -- 8 --10 012 10 8 246 i dp = --76a (pw 10 s) v ds = --20v i d = --19a 100ms tc=25 c single pulse ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it16067 it16066 0 20 40 60 80 100 120 140 160 0.2 0 0.4 0.6 0.8 1.0 1.2 30 20 25 23 10 15 5 0 0 20 40 60 80 100 120 140 160
SFT1350 no. a1874-5/9 taping speci cation SFT1350-tl-h
SFT1350 no. a1874-6/9 outline drawing land pattern example SFT1350-tl-h mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
SFT1350 no. a1874-7/9 bag packing speci cation SFT1350-h
SFT1350 no. a1874-8/9 outline drawing SFT1350-h mass (g) unit 0.315 * for reference mm
SFT1350 ps no. a1874-9/9 note on usage : since the SFT1350 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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